| Title | Transparent Structures for ZnO Thin Film Paper Transistors Fabricated by Pulsed Electron Beam Deposition |
|---|---|
| ID_Doc | 10815 |
| Authors | Gherendi, F; Dobrin, D; Nistor, M |
| Title | Transparent Structures for ZnO Thin Film Paper Transistors Fabricated by Pulsed Electron Beam Deposition |
| Year | 2024 |
| Published | Micromachines, 15, 2 |
| Abstract | Thin film transistors on paper are increasingly in demand for emerging applications, such as flexible displays and sensors for wearable and disposable devices, making paper a promising substrate for green electronics and the circular economy. ZnO self-assembled thin film transistors on a paper substrate, also using paper as a gate dielectric, were fabricated by pulsed electron beam deposition (PED) at room temperature. These self-assembled ZnO thin film transistor source-channel-drain structures were obtained in a single deposition process using 200 and 300 mu m metal wires as obstacles in the path of the ablation plasma. These transistors exhibited a memory effect, with two distinct states, "on" and "off", and with a field-effect mobility of about 25 cm2/Vs in both states. For the "on" state, a threshold voltage (Vth on = -1.75 V) and subthreshold swing (S = 1.1 V/decade) were determined, while, in the "off" state, Vth off = +1.8 V and S = 1.34 V/decade were obtained. A 1.6 mu A maximum drain current was obtained in the "off" state, and 11.5 mu A was obtained in the "on" state of the transistor. Due to ZnO's non-toxicity, such self-assembled transistors are promising as components for flexible, disposable smart labels and other various green paper-based electronics. |
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