| Title | Thermal annealing using ultra-short laser pulses to improve the electrical properties of Al:ZnO thin films |
|---|---|
| ID_Doc | 64168 |
| Authors | Scorticati, D; Illiberi, A; Bor, TC; Eijt, SWH; Schut, H; Römer, GRBE; Gunnewiek, MK; Lenferink, ATM; Kniknie, BJ; Joy, RM; Dorenkamper, MS; de Lange, DF; Otto, C; Borsa, D; Soppe, WJ; in 't Veld, AJH |
| Title | Thermal annealing using ultra-short laser pulses to improve the electrical properties of Al:ZnO thin films |
| Year | 2015 |
| Published | |
| Abstract | Industrial-grade Al:ZnO thin films, were annealed by UV picosecond laser irradiation in argon atmosphere. A remarkable increase of both the carrier density and electron mobility was measured, while the optical properties in the 400-1000 nm range did not change significantly. We studied the microstructure of the films, in order to explain the observed macroscopical changes upon ultra-short pulsed laser annealing. The effects of the ps-laser irradiation are shown to be attributed to the formation of defects and a local atomic rearrangement on the sub-nm scale. This interpretation is rigorously based on the cross-referenced analysis of different experimental techniques (i.e. SEM, AFM, positron annihilation, optical spectroscopy, Hall measurements, Raman spectroscopy, XPS and XRD). The results of this study can be used to develop a new, viable, technological processing technique to further improve Al:ZnO electrodes. (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. |
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