| Title | Structural and electrical properties of metastable defects in hydrogenated amorphous silicon |
|---|---|
| ID_Doc | 65049 |
| Authors | Melskens, J; Schnegg, A; Baldansuren, A; Lips, K; Plokker, MP; Eijt, SWH; Schut, H; Fischer, M; Zeman, M; Smets, AHM |
| Title | Structural and electrical properties of metastable defects in hydrogenated amorphous silicon |
| Year | 2015 |
| Published | Physical Review B, 91.0, 24 |
| Abstract | The structural and electrical properties of metastable defects in various types of hydrogenated amorphous silicon have been studied using a powerful combination of continuous wave electron-paramagnetic resonance spectroscopy, electron spin echo (ESE) decay measurements, and Doppler broadening positron annihilation spectroscopy. The observed dependence of the paramagnetic defect density on the Doppler S parameter indicates that porous, nanosized void-rich materials exhibit higher spin densities, while dense, divacancy-dominated materials show smaller spin densities. However, after light soaking more similar spin densities are observed, indicating a long-term defect creation process in the Staebler-Wronski effect that does not depend on the a-Si: H nanostructure. From ESE decays it appears that there are fast and slowly relaxing defect types, which are linked to various defect configurations in small and large open volume deficiencies. A nanoscopic model for the creation of light-induced defects in the a-Si: H nanostructure is proposed. |
| https://repository.tudelft.nl/file/File_a8e52905-4ea9-46be-8808-be77c499ae7b |
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