| Title | Innovative recycling of high purity silver from silicon solar cells by acid leaching and ultrasonication |
|---|---|
| ID_Doc | 23520 |
| Authors | Click, N; Teknetzi, I; Tam, EPL; Tao, M; Ebin, B |
| Title | Innovative recycling of high purity silver from silicon solar cells by acid leaching and ultrasonication |
| Year | 2024 |
| Published | |
| Abstract | Precious and scarce silver (Ag) is used as a front electrical contact in silicon solar panels. With massive amounts of solar panel waste coming to end-of-life, it is imperative to recover all the Ag from these modules. In this paper, we propose a novel method to easily reclaim Ag from end-of-life silicon solar cells using low concentration sulfuric acid (H2SO4) leaching followed by ultrasonication. Our process simplifies the Ag recycling procedure by directly recovering the Ag contacts from solar cells, eliminating the need for secondary precipitation/electrodeposition. First, scanning electron microscopy (SEM) with energy dispersive X-ray spectroscopy (EDX) and Xray photoelectron spectroscopy (XPS) was used to study the leaching and ultrasonication process on rejected solar wafers. Next, a solar panel from landfill was heated in a furnace to burn off the polymer encapsulant. The silicon wafers were then collected from the burning process and leached in 2 M H2SO4 at two different shaking speeds for 48 h at room temperature. Finally, the end-of-life silicon wafer pieces were collected, sonicated in water, and then the sonication water was centrifuged to show a proof-of-concept to recover the Ag contacts. Inductively coupled plasma optical emission spectroscopy (ICPOES) is used to monitor dissolved elements in the leachate as a function of time and shaking speed. XPS is used to evaluate the composition of the silicon cell wafer surface before and after H2SO4 leaching. SEM is used to image the recovered Ag contacts morphology and EDX confirms the recovered particles contain high amounts of Ag. A proposed schematic illustrates the authors' hypothesis for the peeling mechanism. |
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