| Title |
Thermal annealing using ultra-short laser pulses to improve the electrical properties of Al:ZnO thin films |
| ID_Doc |
64168 |
| Authors |
Scorticati, D; Illiberi, A; Bor, TC; Eijt, SWH; Schut, H; Römer, GRBE; Gunnewiek, MK; Lenferink, ATM; Kniknie, BJ; Joy, RM; Dorenkamper, MS; de Lange, DF; Otto, C; Borsa, D; Soppe, WJ; in 't Veld, AJH |
| Title |
Thermal annealing using ultra-short laser pulses to improve the electrical properties of Al:ZnO thin films |
| Year |
2015 |
| Published |
|
| DOI |
10.1016/j.actamat.2015.07.047 |
| Abstract |
Industrial-grade Al:ZnO thin films, were annealed by UV picosecond laser irradiation in argon atmosphere. A remarkable increase of both the carrier density and electron mobility was measured, while the optical properties in the 400-1000 nm range did not change significantly. We studied the microstructure of the films, in order to explain the observed macroscopical changes upon ultra-short pulsed laser annealing. The effects of the ps-laser irradiation are shown to be attributed to the formation of defects and a local atomic rearrangement on the sub-nm scale. This interpretation is rigorously based on the cross-referenced analysis of different experimental techniques (i.e. SEM, AFM, positron annihilation, optical spectroscopy, Hall measurements, Raman spectroscopy, XPS and XRD). The results of this study can be used to develop a new, viable, technological processing technique to further improve Al:ZnO electrodes. (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. |
| Author Keywords |
Ultrafast laser; Annealing; Al:ZnO; Electrical properties; Laser-induced defects |
| Index Keywords |
Index Keywords |
| Document Type |
Other |
| Open Access |
Open Access |
| Source |
Science Citation Index Expanded (SCI-EXPANDED) |
| EID |
WOS:000361074000033 |
| WoS Category |
Materials Science, Multidisciplinary; Metallurgy & Metallurgical Engineering |
| Research Area |
Materials Science; Metallurgy & Metallurgical Engineering |
| PDF |
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